PART |
Description |
Maker |
IDT71V416YS15YGI IDT71V416YS IDT71V416YL10BEG IDT7 |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 3.3V的CMOS静态RAM 4梅格56K x 16位) 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44
|
IDT[Integrated Device Technology] Integrated Device Technology, Inc.
|
HYB514175BJ-50- Q67100-Q2100 HYB514175BJ-55 HYB514 |
256k x 16-Bit EDO-DRAM 256k x 16位江户的DRAM 256k × 16-Bit Dynamic RAM(256k × 16动RAM) 256k × 16位动态随机存储器56k × 16位动态内存)
|
SIEMENS AG
|
CAT93C46AJ CAT93C46AJI CAT93C46AJI-2.5 CAT93C46AJ- |
72-Mbit QDR-II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 72-Mbit QDR-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 256K (32K x 8) Static RAM 256 Kb (256K x 1) Static RAM 72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) Microwire Serial EEPROM 微型导线串行EEPROM
|
Atmel, Corp.
|
HYB314171BJL-70 HYB314171BJL-60 HYB314171BJL-50 HY |
256k x 16 Bit FPM DRAM 3.3 V 60 ns -3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh 256k x 16 Bit FPM DRAM 3.3 V 70 ns From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
TC55VD836FF-150 TC55VD836FF-133 TC55VD836FF-143 |
256K Word x 36 Bit Synchronous No-turnround Static RAM(256K 字x36位同步无转向静RAM) 256K字36位同步无具体时间的静态RAM56K字x36位同步无转向静态内存)
|
Toshiba Corporation Toshiba, Corp.
|
KM41256AJ-12 KM41257AJ-12 KM41256AJ-10 KM41257AJ-1 |
256K X 1 Bit Dynamic RAM with Page / Nibble Mode 256K × 1位动态随机存储器与页/半字节模
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
GS88118 GS88136 GS88118GT-11IT GS88118GT-11.5IT GS |
512K x 18, 256K x 36 ByteSafe?/a> 8Mb Sync Burst SRAMs 512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs 512K x 18, 256K x 36 ByteSafe8Mb Sync Burst SRAMs 8Mb锛?12K x 18Bit) ByteSafe Synchronous Burst SRAM(8M浣??512K x 18浣??ByteSafe??????RAM锛?甫2浣???插?????板?锛? 512K X 18 CACHE SRAM, 11.5 ns, PQFP100 TQFP-100 512K X 18 CACHE SRAM, 11 ns, PQFP100 TQFP-100 8Mb56K x 36Bit)ByteSafe Synchronous Burst SRAM(8M位(256K x 36位)ByteSafe同步静态RAM(带2位脉冲地址计数器)) 8Mb12K x 18Bit) ByteSafe Synchronous Burst SRAM(8M位(512K x 18位)ByteSafe同步静态RAM(带2位脉冲地址计数器))
|
GSI Technology, Inc.
|
MCM63Z818TQ100R MCM63Z818TQ100 MCM63Z818TQ133R MCM |
128K x 36 and 256K x 18 Bit Pipelined ZBT RAM Synchronous Fast Static RAM
|
Motorola, Inc MOTOROLA[Motorola Inc]
|
7C1327 CY7C1327 |
256K x 18 Synchronous-Pipelined Cache RAM( 256K x 18 同步流水线式高速缓冲存储器 RAM) From old datasheet system
|
Cypress Semiconductor Corp.
|
AS7C3256PFS18A-4TQC AS7C3256PFS16A-4TQC AS7C3256PF |
3.3V 256K x 18 pipeline burst synchronous SRAM, 166 MHz 3.3V 256K x 16 pipeline burst synchronous SRAM, 133 MHz 3.3V 256K x 16 pipeline burst synchronous SRAM, 166 MHz 256K X 18 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, TQFP-100 256K X 16 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, TQFP-100 256K X 16 STANDARD SRAM, 3.8 ns, PQFP100 3.3V 256K x 16/18 pipeline burst synchronous SRAM 3.3V 256K x 16 pipeline burst synchronous SRAM, 150 MHz 3.3V 256K x 16 pipeline burst synchronous SRAM, 100 MHz
|
Alliance Semiconductor, Corp. ALLIANCE SEMICONDUCTOR CORP
|